Investigation of GaP-based structures by electrochemical capacitance-voltage profiling

Gallium phosphide substrate structures with different crystallographic orientation and degree of doping have been studied by means of electrochemical capacitance-voltage (ECV) profiling. A brief description of the ECV profiling as well as its advantages over the conventional capacitance-voltage technique are given. The ECV measurement modes for GaP structures has been worked out, and the necessary electrolyte meets the requirement of polishing character during etching the samples has been selected. During the experiment, the current-voltage and capacitance-voltage characteristics were measured, by which the type of conductivity for each of the samples was determined. Depth distribution profiles of majority charge carrier concentration were obtained. The doping uniformity of samples with p- and n-type impurities is shown up to a depth of 1 µm.

Authors: L. I. Ivkin, G. E. Yakovlev, V. I. Zubkov, A. V. Solomonov

Direction: Physics

Keywords: electrochemical capacitance-voltage profiling, ECV, GaP

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