Influence of the internal electric field on the accumulation of a mobile charge in MOS structures

Using the developed quantitative model, the influence of the internal electric field on the process of accumulation of a mobile charge in MOS structures is shown. The distribution of the mobile charge over the depth of SiO₂ is calculated for various times of thermal field exposure and impurity concentrations. Using Na⁺ ions as an example, the numerical calculation is compared with the analytical and experimental dependences. It is shown that at high concentrations of impurity ions, the internal electric field induced by them increases near the cathode surface and causes excessive accumulation of impurities at the interface.

Authors: O. V. Aleksandrov, N. N. Morozov

Direction: Physics

Keywords: MOS structure, gate dielectric, mobile ionic charge, diffusion, thermal field action

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