АDMITTANCE AND OPTICAL STUDY OF SEMICONDUCTOR HETEROSTRUCTURES AND WAFERS IN CRYOGENIC PROBE STATION IN THE TEMPERATURE RANGE 15 TO 475

A computer-controlled setup for complex electrical and optical study of semiconductor nanoheterostructures, operated in the temperature range 15 to 475 К is developed. The system allows measuring the temperature and frequency admittance spectra and luminescence spectra of heterostructures, including on the basis of wide bandgap semiconductors, as well as the distribution of parameters along a wafer up to 50.2 mm in diameter. The setup consists of a closed-cycle helium probe station Janis, LCR-meter Agilent E4980A and a temperature controller LakeShore 336. The characterization of bulk 4Н-SiC structures and multiple quantum well InGaN/GaN is presented.

Authors: V. I. Zubkov, O. V. Kucherova, I. N. Yakovlev, V. N. Cherkasova, V. A. Ilyin, A. V. Solomonov

Direction: Physical Phenomena in a Solid Body, Liquids and Gases

Keywords: Admittance spectroscopy, capacitance-voltage characteristics, InGaN/GaN, SiC

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