OPTIMIZATION OF PASSIVATION PROCESS ON THE SILICON WAFER SURFACE DURING FORMATION HETEROSTRUCTURE SILICON SOLAR CELL

Results of formation of heterostructure solar cells on crystalline silicon by deposition on the wafer surface of amorphous hydrogenated silicon are presented in the paper. The procedure of heterostructure formation and crystalline silicon surface defect passivation is described. It is shown that it is possible to achieve minority carrier lifetime over 1 msec after surface passivation, which is sufficient to form heterostructure silicon solar cell with efficiency over 20 %.

Authors: D. l. Orekhov

Direction: Physical Electronics and Technologies of Micro- and Nanostructures

Keywords: Solar cells, amorphous hydrogenated silicon, heterojunction, solar cell efficiency

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