HYBRID MATRIX PHOTODETECTOR FOR INFRARED SPECTRAL RANGE

The design and operating principle of heterostructure InP/InGaAs/InP photocathode in a photoelectric device for the near-IR range are considered. The results of optimization of hybrid photodetector for spectral range 0.95–1.65 μm based on this heterostructure with solid solution In0.53Ga0.47As are presented. An increase the vacuum level in the pressing chamber and an increase the thickness of the InGaAs layer – the radiation absorber – made it possible to enhance the quantum yield from 5 to 12 %. The mechanisms leading to the quantum efficiency decay of the photocathode are being studied. The rate of the quantum efficiency degradation of the photocathode is measured for three hybrid devices. Methods to reduce the degradation rate of the photocathode sensitivity are analyzed and suggested. The measured spectral sensitivity of the developed hybrid device is 20 times greater than the sensitivity of the best solid-state array IR photodetectors.

Authors: A. A. Egorenkov, V. I. Zubkov, A. V. Solomonov, D. E. Mironov, A. V. Pashuk, M. R. Ainbund

Direction: Physics

Keywords: IR-photosensor, hybrid device, photocathode, quantum efficiency, UH vacuum

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