ON APPROXIMATE ESTIMATION OF DRIFT STEP RECOVERY DIODES BASED NANO- AND SUBNANOSECOND PULSE GENERATORS’ OPTIMAL PARAMETERS

Based on the method described in [1] for estimating the maximum charge of non-equilibrium carriers stored in the layers of structures of silicon-carbide drift step recovery diodes (DSRD) when a forward pump current pulse of a given density is passed through them, a method for approximate estimation of the parameters of 4H-SiC DSRD-based ultrashort pulse generators is proposed. The method was tested by comparing it with the results of numerical simulation in the Synopsys TCAD software of the named pulse generator circuit with the 4H-SiC DSRD implemented as an ultra-fast current breaker. The proposed evaluation method is designed to select the optimal operation modes of the DSRD as a part of nano- and subnanosecond voltage pulse generators, which allows us to obtain the maximum possible efficiency values for these cir-cuits, thereby minimizing the switching charge in the diodes.

Authors: S. Shevchenko, B. Ivanov, A. Smirnov, V. Luchinin, V. Ilyin, A. Afanasyev, A. Kardo-Sysoev

Direction: Physics

Keywords: Drift step recovery diodes, DSRD, subnanosecond pulse generators, charge accumulation, Synopsys Sentaurus TCAD simulation

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