Development of a method for monitoring the structure of photodiode silicon targets for television tubes

The aim of this work is to develop a new method for monitoring silicon targets for difficult-to-identify defects. The study solved the problem of defects in the form of a large white spot on the image using X-ray diffraction analysis. During the work, substrate deformations were detected due to an incorrectly performed operation of pressing the target into the tube, which caused mechanical stresses that served to increase the concentration of charge carrier generation centers. An alternative cause for the occurrence of such a defect was also identified: different expansion coefficients of the overlying layers of the silicon substrate, as a result of which they «stretch» it, leading to distortions in the structure.

Authors: A. A. Sokolova, V. D. Andreeva, V. V. Davydov, D. S. Provodin, A. E. Kim

Direction: Physics

Keywords: silicon target, x-ray diffraction, mechanical stresses

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