Vacuum deposition of multilayer thin-film resistive structures with temperature self-compensation for ultra-precision chip-resistors

The main modes of obtaining and stabilizing multilayer thin-film resistive structures with temperature self-compensation, which allows to achieve a TCS value no more than ±2 · 10^–6 and a resistance instability of no more than ±(0.01...0.02) %, are presented. The alloy X20H75YU, as well as K-20C and K-30C kermets, were chosen as nichrome-based resistive films. The resistive layer is a two-layer structure, which is obtained in a single technological cycle in a vacuum from two highly stable materials with positive and negative TCS. The studies results of the electrophysical characteristics of TPR made of alloy X20H75YU and K-20C and K-30C kermets confirm the possibility of combining resistive films from these materials, choosing the ratio of layer thicknesses with positive and negative TCS in a two-layer thin-film structure, it is possible to achieve TCS close to zero. The technology has eliminated the operation of thermal stabilization in vacuum on photolithography when etching contact pads after spraying films. To study the temperature characteristics, a resistor based on the obtained multilayer thin-film structure was welded with a thin wire into a chip housing.

Authors: V. D. Zuev, A. A. Ryzhov, S. A. Gurin, A. E. Shepeleva, M. D. Novichkov, P. A. Gurin

Direction: Physics

Keywords: thin-film microelectronics technology, thin-film resistor, temperature coefficient of resistance, instability of resistance

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