Alloy films sputtering M₁xM₂(1–x)

The purpose of this work was to analyze the deposition of M₁xM₂(1–x) binary alloy films using a magnetron equipped with a new two-layer sputtering unit. The internal plate of the unit made of M₂ metal was effectively cooled with running water and was sputtered through slits in the external plate made of M₁ metal, which operated in the hot mode. Two slits located symmetrically in the annular sputtering area of the external plate had the shape of ring sectors. The analysis performed of the metal atom fluxes generated by the sputtering unit made it possible to establish when the relative area of the slits changes from 0 to 1, the stoichiometric coefficient x of the M₁xM₂(1–x) film could change from 1 to 0. The results obtained were used to study the effect of the discharge current and the ring sector angle on the chemical composition of the Ta_xTi_1–x alloy film. It was found that at a discharge current of less than 6 A, the evaporation of the tantalum plate is insignificant and the stoichiometric coefficient in the chemical formula of the film does not depend on the discharge current. The effect of the ring sector angle on the film composition was determined by a simple function. It is shown that the performed analysis made it possible to study the effect of independent variables of the sputtering process on the physical-chemical properties of the films. For example, the effect of the ring sector angle on the wear resistance of the Ta_xTi_1–x film was established.

Authors: N. M. Ivanov, V. I. Shapovalov, D. S. Sharkovskii

Direction: Physics

Keywords: magnetron, sputtering, sputtered unit, film, alloy, tantalum, titanium

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