Perspectives for the development of SWIR-band photodetectors with colloidal quantum dots

Modern infrared (IR) photodetectors based on semiconductor colloidal quantum dots (CQDs), including PbS CQDs deposited on silicon, are considered. The mechanism of photocurrent generation associated with exciton generation in PbS and Si CQDs and their subsequent dissociation at the CQD/Si interface with charge carrier transfer to the electrodes is demonstrated. In order to ensure a high-quality interface of the PbS/Si heterojunction and increased efficiency of photocurrent carrier collection, silicon surface passivation was shown to be necessary. Methods for silicon passivation leading to the highest external quantum efficiency are discussed. An evaluative modeling of the Si/PbS CQD heterojunction with an excitonic peak at 1550 nm is conducted.

Authors: А. A. Egorenkov, D. S. Mazing, R. A. Avvakumov, S. N. Chelyshkov, V. I. Zubkov, V. A. Moshnikov

Direction: Physics

Keywords: infrared photodetectors, colloidal quantum dots, silicon surface passivation, PbS

---

View full article