Effect of doping method on i-v characteristics of infrared photodetectors with quantum wells based on GaAs/AlGaAs heterostructures

The aim of this work is to study the impact of the method of doping quantum wells on the shape of current-voltage characteristics of cooled infrared photodetectors based on GaAs/AlGaAs heterostructures, sensitive in the spectral region 8…10 μm. The structures were grown in a domestic molecular beam epitaxy setup. The doping was carried out by opening shutters in front of the silicon during the growth of quantum wells. The variable parameter was the position of the doped region inside the quantum well. At the end of the technological process, current-voltage characteristics were measured on all samples. A significant influence was revealed of the position of the doped region in the quantum well on the type of current-voltage characteristics, due to the segregation of the dopant (Si) into the barrier layers.

Authors: A. L. Dudin, I. V. Kogan, L. S. Bogoslovskaya, V. I. Zubkov

Direction: Physics

Keywords: quantum well infrared photodetectors, dopant segregation, current-voltage characteristics

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