Investigation of electrical properties of silicon-based ion-doped photosensitive structures

The research object was a photosensitive structure operating on the effect of avalanche multiplication, used for registration of weak optical signals. The research was aimed at investigation of electrophysical properties of a photosensitive structure and measurement of its noise parameters using a specifically-constructed measuring device. The current–voltage characteristic of an avalanche photodiode, manufactured by Electron, JSC, was measured in the dark and when illuminated with red light. The avalanche multiplication factor of the structure under these conditions was also calculated. The dependence of current density on bias voltage was calculated and plotted; the dependence of current magnitude on photodiode area was revealed. The noise parameters of the photodiode were investigated. The standard deviation from the signal and dynamic range of the investigated device were calculated.

Authors: O. B. Maksimenkova, I. P. Lobanov

Direction: Physics

Keywords: avalanche photodiode, photosensitive structure, ion doping, avalanche multiplication effect

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