Influence of the isotope composition of high-pure germanium on its interaction with a neutron flux

The possibility of varying the properties of semiconductor materials is relevant for the development of microelectronics and creation of semiconductor materials with improved properties. In this study, we set out to investigate the mechanisms of interaction of neutron radiation with high-purity germanium (HPG). This semiconductor material can be used as part of detecting structures in the development of high energy-resolution measuring equipment designed to analyze complex radiation spectra.

Authors: V. E. Solovyev, Yu. Yu. Bunkova, I. Eu. Novikov, O. V. Volpyas

Direction: Physics

Keywords: HPG; neutron radiation, semiconductor degradation, semiconductor, germanium isotopes

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