Influence of traps on mobile charge accumulation in MOS structures in thermal field treatments

A quantitative model describing the influence of traps on the parameters of mobile charge migration in the gate dielectric of MOS structures is presented. The dependences of the effective diffusion coefficients and activation energy on trap accumulation, ion-trapping binding energy, impurity concentrations, and thermal field treatment temperatures are calculated. An increase in trap concentration was found to hamper mobile charge accumulation in the vicinity of the Si-SiO₂ interface. The presented model can be used to explain the scattering of experimental data on sodium ion diffusion in silicon dioxide.

Authors: N. N. Morozov, O. V. Aleksandrov

Direction: Physics

Keywords: MOS structure, gate dielectric, mobile ionic charge, diffusion, thermal field treatment

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