CHARACTERIZATION OF FUNCTIONAL AREAS IN SILICON CARBIDE EPITAXIAL AND DEVICE STRUCTURES BY SEM IN DOPANT CONTRAST MODE

The modes for obtaining dopant contrast in SEM were developed for silicon carbide epitaxial and ion implanted structures, what made it possible to characterize functional 4H-SiC areas in terms of conductivity type, doping levels, and geometric dimensions. It was established that the maximum contrast in the secondary electron registration mode is observed when SEM operates in the low-voltage range at primary electron energies of 2-6 keV. The study of anisotypic regions topology of 4H-SiC JBS diode and layer-by-layer analysis of the high-voltage 4H-SiC p-i-n mesa-diode were carried out. It was demonstrated that the developed technique makes it possible to identify functional regions of various types of conductivity in 4H-SiC device structures, measure their thickness with acceptable accuracy, and qualitatively assess their doping level.

Authors: A. V. Afanasyev, V. A. Golubkov, V. A. Ilyin, V. V. Luchinin, A. A. Ryabko, K. A. Sergushichev, V. V. Trushlyakova, S. A. Reshanov

Direction: Informatics, Computer Technologies And Control

Keywords: Scanning Electron Microscopy, dopant contrast, silicon carbide, epitaxial structure, p-i-n diode, JBS-diode

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