TEMPERATURE DEPENDENCE OF CARRIER CONCENTRATION IN BORON-DOPED DIAMOND WITH ACCOUNTING THE CONCENTRATION-DEPENDENT ACTIVATION ENERGY
Single-crystal diamond samples doped with boron were investigated by admittance spectroscopy. Current-voltage and capacitance-voltage characteristics were measured. Temperature conductance spectra were used for calculation activation energy for boron impurity in diamond. Capacitance-voltage characteristics, measured at various temperatures and bias frequencies were used for obtaining free charge carrier concentration profiles into the depths of the samples. Experimental results demonstrate a decrease of boron activation energy from 340 to 220 meV at doping level increasing for two orders of magnitude – from 5 ∙ 1016 до 6 ∙ 1018 cm–3, which correlates well with the literature data. Theoretical calculations of temperature dependence of carrier concentration in diamond doped with boron were carried out for samples of various doping levels taking into account the dependence of activation energy on concentration. The obtained experimental and theoretical data are in good agreement with each other.
Authors: V. I. Zubkov, A. V. Solomnikova, A. A. Egorenkov
Keywords: Admittance spectroscopy, boron doped diamond, carrier concentration, activation energy
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