A model of the thermal oxidation of silicon carbide is presented, in which the interaction with the oxidant occurs at the front of the bulk reaction. The depth of the reaction zone corresponds to the depth of the transition layer with broken stoichiometry. The model takes into account the oxidizer diffusion coefficient relaxation from the value in the stressed silicon dioxide to the value of the diffusion coefficient in fused quartz. Relaxation is associated with the structural rearrangement of amorphous dioxide at a distance from the boundary of the reaction zone. The characteristic relaxation time for the diffusion coefficient in silicon dioxide corresponds to the relaxation time of internal mechanical stresses. The results of calculations based on the model describe well the kinetics of thermal oxidation of silicon carbide in a wide range of thicknesses and temperatures. The model can be used for creating a software package that allows to prognosticate the growth of thin dielectric films on semiconductor silicon carbide plates.

Authors: D. M. Benevolensky, A. I. Dus, S. M. Movnin, A. K. Shanurenko

Direction: Physical Electronics and Technologies of Micro- and Nanostructures

Keywords: Oxidation of silicon carbide, oxygen diffusion, transition layer, viscoelastic oxide flow

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