IMPEDANCE SPECTROSCOPY OF LAYERS OF POROUS SILICON (POR-SI)

The peculiarities of behavior of the impedance characteristics of porous layers of silicon. Basically the frequency range observed variance component of the impedance, corresponding to the dipole-polarization relaxation with a distribution of relaxation times. In the low frequency region the deviation of the pulse-dannyh spectra from Babaevskij, which is well described by Warburg impedance for semi-infinite length diffusion.

Authors: M. P. Sevryugina, N. S. Pshchelko, Yu. M. Spivak, V. A. Moshnikov, A. R. A. Castro

Direction: Physical Phenomena in a Solid Body, Liquids and Gases

Keywords: Impedance, relaxation of polarization, the polarization of the migration, diffusion of ions

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