ELECTROCHEMICAL CAPACITANCE-VOLTAGE PROFILING OF GALLIUM ARSENIDE AND GALLIUM NITRIDE HEMT HETEROSTRUCTURES

A brief review of the operation principle and features of 2D electron gas (2DEG) appearance in arsenide- and nitride gallium high electron mobility transistors (HEMT) is given. The main application fields of modern HEMT are shown. A brief history of development and the main types of structures underlying such devices are presented. Particular attention is paid to the explanation of the conducting channel origin due to the polarization effects taking place in the nitride structures. A modern effective method of diagnostic the concentration of free charge carriers in HEMT structures (electrochemical capacitance-voltage (ECV) profiling) is also described. AlGaAs/InGaAs/GaAs and AlGaN/GaN HEMT heterostructures were investigated by means of ECV technique. The free charge carriers depth profiles and 2DEG density in quantum wells (QW) were obtained. The analysis and comparison of QW filling in case of different doping mechanism of emitter and 2DEG origin were done.

Authors: G. E. Yakovlev, V. I. Zubkov

Direction: Physical Phenomena in a Solid Body, Liquids and Gases

Keywords: Electrochemical capacitance-voltage profiling, ECV, pHEMT, delta-doping, HEMT, GaAs, InGaAs/GaAs/AlGaAs, GaN, GaN/AlGaN, 2DEG

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