WIDE-GAP ALGAN-BASED HETEROSTRUCTURES FOR PHOTO-AND OPTOELECTRONIC DEVICES OPERATING IN MIDDLE ULTRAVIOLET SPECTRAL REGION
The paper is devoted to a new segment of the semiconductor photo- and optoelectronic devices operating in the middle ultraviolet (UV) range (< 300 nm), based on the wide-gap (Al, Ga)N compounds. The approaches to solution of key problems of epitaxial growth of AlGaN heterostructures on c-Al2O3 substrates by using plasma-assisted molecular beam epitaxy have been considered and the main results on elaboration of device heterostructures for UV-photocathodes with negative electron affinity, UV-p–i–n photodiodes, UV-LEDs, electron-beam-pumped high-power sources of spontaneous UV-emission as well as optically-pumped UV lasers have been presented.
Authors: V. N. Jmerik, A. A. Toropov, S. V. Ivanov
Direction: Physical Phenomena in a Solid Body, Liquids and Gases
Keywords: Wide-bandgap group-III nitride compounds III-N, AlGaN heterostructures, plasma-assisted molecular-beam epitaxy, ultraviolet (UV) photo- and optoelectronics
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