TEMPERATURES DISTRIBUTION SIMULATION IN THE SAPPHIRE CRYSTALS FOR DEFECTS FORMATION DIAGNOSTIC

The temperatures gradient for the sapphire crystals growth by the horizontal directed crystallization method is received. The three-dimensional mathematical simulation by the method of final volume on the unstructured grid was used. The estimation of gas bubbles sizes near the liquid crystallization front was made. This approach allows to solve such problem in the field of sapphire crystals growth as crystals reception with the reduced defects level.

Authors: S. P. Malyukov, Y. V. Klunnikova

Direction: Physics Solid Body and Electronics

Keywords: Technological process, horizontal directed crystallization method, sapphire crystals, temperatures distribution

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