MICROSTRUCTURE OF CHEMICAL BATH DEPOSITED CU–GA–SE THIN FILMS
The surface structure of Cu–Ga–Se thin films prepared by collateral chemical bath deposition of copper (I) Cu2Se and gallium selenides Ga2Se3 was investigated by means of an atomic-force microscopy and scanning electron microscopy. The change of the layers architecture and morphology after thermal processing in air atmosphere at 723 K was showed.
Authors: S. S. Tulenin, E. A. Fedorova, L. N. Maskaeva, Y. M. Spivak, V. A. Moshnikov, V. F. Markov
Direction: Physics Solid Body and Electronics
Keywords: Gallium selenide (III), copper selenide (I), chemical bath deposition, thin films, atomic-force microscopy, scanning electron microscopy
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