INTERVALLEY MIXING OF ELECTRONIC STATES IN HETEROSTRUCTURES WITH Si/SiO2 QUANTUM WELLS
We present a new theory for indirect-gap semiconductor heterostructures, which allows taking into account intervalley mixing. For SiO2/Si/SiO2 (001) quantum wells we calculate the dependens of electoronic ground state splitting on quantum well width.
Authors: G. F. Glinskii, M. S. Mironova
Direction: Physics Solid Body and Electronics
Keywords: Nanoheterostructures, quantum wells, Schrödinger equation
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